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| HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q www..com A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 HUR10100 HUR10120 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=8A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 35 10 40 6.9 0.8 -55...+175 175 -55...+150 60 0.4...0.6 2 Unit A A mJ A o C W Nm g HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=10A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 60 0.25 1.96 2.94 2.5 0.5 Unit uA mA V K/W ns A IR VF www..com RthJC RthCH trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100 C o 40 4 FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 30 A 25 IF 20 TVJ=150C 2000 nC 1500 Qr TVJ= 100C VR = 600V 40 TVJ= 100C A VR = 600V IF= 20A IF= 10A IF= 5A IRM 30 15 TVJ=100C 1000 20 IF= 20A IF= 10A IF= 5A 10 www..com TVJ= 25C 500 10 5 0 0 1 2 3 VF 4V 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 150 ns 140 TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR tfr TVJ= 100C IF = 10A VFR 2.0 1.2 us tfr 0.8 1.5 Kf 1.0 trr 130 120 110 IF= 20A IF= 10A IF= 5A 80 IRM 40 0.4 0.5 Qr 100 90 0 0 200 400 600 -diF/dt 800 A/us 1000 0 200 400 0.0 600 A/us 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.558 0.493 ti (s) 0.0052 0.0003 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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